Study of saturation conduction in short-channel MOS transistors by numerical simulationTONG, K. Y.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 4, pp 173-176, issn 0143-7100Article

The threshold voltage of short-channel BC-MOSFET in the enhancement modeTONG, K. Y.Solid-state electronics. 1987, Vol 30, Num 12, pp 1359-1361, issn 0038-1101Article

Punchthrough limits in MOS devicesTONG, K. Y.Microelectronics. 1987, Vol 18, Num 3, pp 41-49, issn 0026-2692Article

Modelling of multilayer on-chip transformersTSUI, C; TONG, K. Y.IEE proceedings. Microwaves, antennas and propagation. 2006, Vol 153, Num 5, pp 483-486, issn 1350-2417, 4 p.Article

The salinity tolerance of Corbicula fluminea (Bivalvia: Corbiculoidea) from Hong KongMORTON, B; TONG, K. Y.Malacological review. 1985, Vol 18, Num 1-2, pp 91-95, issn 0076-3004Article

Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiationJELENKOVIC, Emil V; RISTIC, G. S; PEJOVIC, M. M et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 1, issn 0022-3727, 013101.1-013101.7Article

Noise and structural properties of reactively sputtered RuO₂thin filmsJEVTIC, Milan M; JELENKOVIC, Emil V; TONG, K. Y et al.Thin solid films. 2006, Vol 496, Num 2, pp 214-220, issn 0040-6090, 7 p.Article

PT/P(VDF-TrFE) 0-3 nanocomposite thin film pyroelectric sensorsCHEN, Y; LI, J; CHAN, H. L. W et al.Journal de physique. IV. 1998, Vol 8, Num 9, pp Pr9.139-Pr9.142, issn 1155-4339Conference Paper

Photoluminescence in porous sputtered polysilicon films formed by chemical etchingHUANG, W. N; TONG, K. Y; CHAN, P. W et al.Semiconductor science and technology. 1997, Vol 12, Num 2, pp 228-233, issn 0268-1242Article

Preparation and characterization of epitaxial La_0.5Sr_0.5CoO₃ films and of an all a-axis oriented YBa₂Cu₃O_7-y/La_0.5Sr_0.5CoO₃/ YBa₂CU₃O_7-y heterostructure on (001) LaAIO₃ by pulsed laser depositionCHAN, P. W; WU, W; WONG, K. H et al.Journal of physics. D, Applied physics (Print). 1997, Vol 30, Num 6, pp 957-961, issn 0022-3727Article

Positive bias temperature instability of irradiated n-channel thin film transistorsJELENKOVIC, Emil V; KOVACEVIC, Milan S; STUPAR, Dragan Z et al.Thin solid films. 2014, Vol 556, pp 535-538, issn 0040-6090, 4 p.Article

A physical analytical model of multilayer on-chip inductorsTONG, K. Y; TSUI, C.IEEE transactions on microwave theory and techniques. 2005, Vol 53, Num 4, pp 1143-1149, issn 0018-9480, 7 p.Article

RuO₂-SiO₂ composite thin films with wide resistivity rangeJELENKOVIC, Emil V; TONG, K. Y; CHEUNG, W. Y et al.Microelectronic engineering. 2004, Vol 71, Num 3-4, pp 237-241, issn 0167-9317, 5 p.Article

Gait control system for functional electrical stimulation using neural networksTONG, K. Y; GRANAT, M. H.Medical & biological engineering & computing. 1999, Vol 37, Num 1, pp 35-41, issn 0140-0118Article

Reliability of neural-network functional electrical stimulation gait-control systemTONG, K. Y; GRANAT, M. H.Medical & biological engineering & computing. 1999, Vol 37, Num 5, pp 633-638, issn 0140-0118Article

Levels of 2,3,7,8-TCDD and 2,3,7,8-TCDF in human adipose tissue from hospitalized persons in the North and South of Vietnam 1984-88SCHECTER, A; DAN VU; TONG, K. Y et al.Chemosphere (Oxford). 1989, Vol 19, Num 1-6, pp 1001-1004, issn 0045-6535Conference Paper

Development of computer-based environment for simulating the voluntary upper-limb movements of persons with disabilityTONG, K. Y; MAK, A. F. T.Medical & biological engineering & computing. 2001, Vol 39, Num 4, pp 414-421, issn 0140-0118Article

Temperature dependence of resistance in reactively sputtered RuO₂ thin filmsTONG, K. Y; JELENKOVIC, V; CHEUNG, W. Y et al.Journal of materials science letters. 2001, Vol 20, Num 8, pp 699-700, issn 0261-8028Article

Charge relaxation in nitrided and non-nitrided sputtered oxideJELENKOVIC, E. V; TONG, K. Y.Journal of non-crystalline solids. 1999, Vol 254, pp 99-105, issn 0022-3093Conference Paper

Effect of deposition conditions on stability of sputtered oxide in MOS structuresJELENKOVIC, E. V; TONG, K. Y.Microelectronics and reliability. 1997, Vol 37, Num 1, pp 159-169, issn 0026-2714Article

Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler―Nordheim constant current stressJELENKOVIC, Emil V; KOVACEVIC, Milojko; JHA, S et al.Microelectronic engineering. 2013, Vol 104, pp 90-94, issn 0167-9317, 5 p.Article

Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma raysJHA, S; JELENKOVIC, Emil V; PEJOVIC, M. M et al.Microelectronic engineering. 2009, Vol 86, Num 1, pp 37-40, issn 0167-9317, 4 p.Article

Nitridation of hafnium oxide by reactive sputteringTONG, K. Y; JELENKOVIC, Emil V; LIU, W et al.Microelectronic engineering. 2006, Vol 83, Num 2, pp 293-297, issn 0167-9317, 5 p.Article

Numerical simulation of current-voltage characteristics of AlGaN/GaN HEMTs at high temperaturesYUANCHENG CHANG; TONG, K. Y; SURYA, C et al.Semiconductor science and technology. 2005, Vol 20, Num 2, pp 188-192, issn 0268-1242, 5 p.Article

Characterization of 1/f noise in GaN-based HEMTs under high dc voltage stressJHA, S. K; ZHU, C. F; JELENKOVIC, E et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 256-267, issn 0277-786X, isbn 0-8194-5839-2, 1Vol, 12 p.Conference Paper